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IRL540STRLPBF

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IRL540STRLPBF

MOSFET N-CH 100V 28A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRL540STRLPBF is an N-Channel Power MOSFET designed for demanding applications in power management and industrial automation. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 28A (Tc) at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 77mOhm maximum at 17A and 5V Vgs, with a gate drive voltage range of 4V to 5V for optimal performance. Key electrical characteristics include a maximum gate charge (Qg) of 64 nC at 5V and an input capacitance (Ciss) of 2200 pF maximum at 25V. The device supports a maximum gate-source voltage (Vgs) of ±10V and a threshold voltage (Vgs(th)) of 2V at 250µA. With a power dissipation rating of 150W (Tc) and 3.7W (Ta), it is suitable for high-power switching applications. The component is housed in a TO-263-3, D2PAK surface mount package and operates across a wide temperature range of -55°C to 175°C. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 17A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V

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