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IRL540SPBF

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IRL540SPBF

MOSFET N-CH 100V 28A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRL540SPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 28A at 25°C (Tc). With a low on-resistance (Rds On) of 77mOhm maximum at 17A and 5V, it minimizes conduction losses. The device offers a maximum power dissipation of 150W at 25°C (Tc) and 3.7W at 25°C (Ta). Key electrical parameters include a gate charge (Qg) of 64 nC maximum at 5V and input capacitance (Ciss) of 2200 pF maximum at 25V. The IRL540SPBF utilizes a TO-263 (D2PAK) surface mount package, suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in power supplies, motor control, and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 17A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V

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