IRL540PBF
MOSFET N-CH 100V 28A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL540PBF is a high-performance N-Channel power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 28A at 25°C, this TO-220AB packaged device offers a maximum power dissipation of 150W. With a low on-resistance (Rds On) of 77mOhm at 17A and 5V gate-source voltage, it ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 64 nC at 5V and input capacitance (Ciss) of 2200 pF at 25V. The operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in industrial motor control, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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