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IRL530STRRPBF

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IRL530STRRPBF

MOSFET N-CH 100V 15A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRL530STRRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 15A at 25°C (Tc). The Rds(On) is specified at a maximum of 160mOhm at 9A and 5V, with typical drive voltages ranging from 4V to 5V. Gate charge (Qg) is 28 nC maximum at 5V, and input capacitance (Ciss) is 930 pF maximum at 25V. The device offers robust power dissipation, with 88W (Tc) and 3.7W (Ta). Housed in a TO-263-3, D2PAK surface mount package, it operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power conversion and switching applications within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 9A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds930 pF @ 25 V

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