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IRL530STRR

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IRL530STRR

MOSFET N-CH 100V 15A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRL530STRR is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 100V Drain-Source Voltage (Vdss) and a continuous Current Drain (Id) of 15A (Tc) at 25°C. The Rds On is specified at a maximum of 160mOhm at 9A and 5V gate drive, with typical drive voltages ranging from 4V to 5V. Key parameters include a Gate Charge (Qg) of 28 nC at 5V and an Input Capacitance (Ciss) of 930 pF at 25V. The device offers a maximum power dissipation of 88W (Tc) and 3.7W (Ta). Housed in a TO-263-3, D2PAK surface mount package, it operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 9A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds930 pF @ 25 V

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