IRL530S
MOSFET N-CH 100V 15A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRL530S, offers a 100V drain-source voltage and 15A continuous drain current at 25°C (Tc). This TO-263 (D2PAK) surface mount device features a maximum Rds On of 160mOhm at 9A and 5V Vgs. Key parameters include a gate charge (Qg) of 28 nC at 5V and input capacitance (Ciss) of 930 pF at 25V. Power dissipation is rated at 3.7W (Ta) and 88W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial and automotive applications requiring robust power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
Request a Quote
Clients Also Buy
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SI3442CDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP
