IRL530
MOSFET N-CH 100V 15A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL530 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 15A at 25°C, with a maximum power dissipation of 88W (Tc). The low on-resistance of 160mOhm is achieved at 9A and 5V Vgs. Key parameters include a Gate Charge (Qg) of 28nC (max) at 5V and an Input Capacitance (Ciss) of 930pF (max) at 25V. The IRL530 is housed in a through-hole TO-220AB package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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