IRL520S
MOSFET N-CH 100V 9.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL520S is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 9.2A at 25°C (Tc). The IRL520S offers a low on-resistance (Rds On) of 270mOhm maximum at 5.5A and 5V gate-source voltage. With a gate charge (Qg) of 12 nC maximum at 5V and input capacitance (Ciss) of 490 pF maximum at 25V, it provides efficient switching characteristics. The device is packaged in a TO-263 (D2PAK) surface-mount package, facilitating integration into compact designs. Power dissipation is rated at 3.7W (Ta) and 60W (Tc). This MOSFET is suitable for use in industrial and automotive power management systems. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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