IRL520PBF-BE3
MOSFET N-CH 100V 9.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL520PBF-BE3 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 9.2A at 25°C, with a maximum power dissipation of 60W (Tc). The Rds(on) is specified at a maximum of 270mOhm when driven at 5.5A and 5V. Key parameters include a Gate Charge (Qg) of 12 nC (max) at 5V and an Input Capacitance (Ciss) of 490 pF (max) at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220AB package. This MOSFET is suitable for use in industrial power control, automotive systems, and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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