IRL520PBF
MOSFET N-CH 100V 9.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number IRL520PBF. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) rating of 9.2A at 25°C. The ON-resistance (Rds On) is specified at 270mOhm maximum at 5.5A and 5V gate drive. Gate charge (Qg) is 12 nC maximum at 5V, and input capacitance (Ciss) is 490 pF maximum at 25V. It offers 60W of power dissipation and operates across a temperature range of -55°C to 175°C. The component is housed in a TO-220AB package with through-hole mounting. Industries utilizing this MOSFET include industrial automation and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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