IRL520LPBF
MOSFET N-CH 100V 9.2A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL520LPBF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of 9.2A at 25°C. The low Rds(on) of 270mOhm at 5.5A and 5V gate drive ensures minimal conduction losses. With a maximum power dissipation of 60W and a junction temperature range of -55°C to 175°C, it is suitable for demanding industrial and automotive power management systems. The TO-262-3 package with long leads facilitates through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 12 nC at 5V and input capacitance (Ciss) of 490 pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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