IRL520L
MOSFET N-CH 100V 9.2A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL520L is an N-channel power MOSFET with a drain-source voltage (Vdss) of 100V. It offers a continuous drain current (Id) of 9.2A at 25°C and a maximum power dissipation of 60W. The Rds(on) is specified at 270mOhm maximum at 5.5A and 5V gate-source voltage. Key parameters include gate charge (Qg) of 12nC at 5V and input capacitance (Ciss) of 490pF at 25V. This through-hole component is housed in a TO-262-3 package with long leads. The operating temperature range is -55°C to 175°C. This device is suitable for applications in power management, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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