IRL520
MOSFET N-CH 100V 9.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRL520 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 9.2A at 25°C (Tc). With a maximum power dissipation of 60W (Tc), it is suitable for demanding thermal environments. The On-Resistance (Rds On) is specified at 270mOhm maximum at 5.5A and a gate-source voltage of 5V. The device utilizes a TO-220AB through-hole package for robust mounting. Key electrical characteristics include a typical input capacitance (Ciss) of 490pF at 25V and a gate charge (Qg) of 12nC at 5V. The threshold voltage (Vgs(th)) is a maximum of 2V at 250µA. This MOSFET is commonly employed in industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
SQA444CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
