IRL510S
MOSFET N-CH 100V 5.6A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRL510S is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 5.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 540mOhm at 3.4A and 5V Vgs, it offers low conduction losses. The IRL510S utilizes Metal Oxide technology and is packaged in a TO-263-3, D2PAK surface mount configuration. Key parameters include a Gate Charge (Qg) of 6.1 nC @ 5V and Input Capacitance (Ciss) of 250 pF @ 25V. Power dissipation is rated at 43W (Tc) and 3.7W (Ta). This component is commonly deployed in industrial automation, power supplies, and motor control systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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