IRL510L
MOSFET N-CH 100V 5.6A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number IRL510L, offers a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.6A at 25°C. This through-hole component, packaged in a TO-262-3 (I2PAK) configuration, features a maximum Rds(on) of 540mOhm at 3.4A and 5V Vgs. Key electrical parameters include a gate charge (Qg) of 6.1 nC (max) at 5V and input capacitance (Ciss) of 250pF (max) at 25V. The device operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in industrial and consumer electronics requiring efficient power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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