IRL3502L
MOSFET N-CH 20V 110A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-CH 20V 110A IRL3502L. This N-Channel power MOSFET features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 110A at 25°C (Tc). With a low Rds(on) of 7mOhm at 64A and 7V, it offers efficient power handling up to 140W (Tc). The component utilizes MOSFET technology and is housed in a TO-262-3 package with long leads. Key electrical parameters include a Gate Charge (Qg) of 110 nC at 4.5V and input capacitance (Ciss) of 4700 pF at 15V. Drive voltages range from 4.5V to 7V. Operating temperature is specified from -55°C to 150°C (TJ). This device is suitable for applications in power conversion and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 64A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |
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