IRL3202L
MOSFET N-CH 20V 48A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRL3202L is an N-Channel power MOSFET designed for high-efficiency switching applications. This component offers a Drain-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 48 A at 25°C (Tc). With a low on-resistance (Rds On) of 16 mOhm at 29 A and 7 V, it minimizes conduction losses. Key electrical characteristics include a maximum power dissipation of 69 W (Tc) and a gate charge (Qg) of 43 nC at 4.5 V. The input capacitance (Ciss) is 2000 pF at 15 V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-262-3 package with long leads. This MOSFET technology is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |
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