IRL3103D1STRR
MOSFET N-CH 30V 64A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel MOSFET, part number IRL3103D1STRR, is a 30V device from the FETKY™ series, presented in a TO-263 (D2PAK) surface-mount package. This component offers a continuous drain current of 64A (Tc) and a low on-resistance of 14mOhm at 34A and 10V. Key characteristics include an input capacitance (Ciss) of 1900pF at 25V and a gate charge (Qg) of 43nC at 4.5V. The threshold voltage (Vgs(th)) is specified at 1V for 250µA. This MOSFET is suitable for applications in automotive and industrial power switching. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
Request a Quote
Clients Also Buy
NTTD4401FR2
MOSFET P-CH 20V 2.4A MICRO8
NTMSD3P102R2
MOSFET P-CH 20V 2.34A 8SOIC
NTTD4401FR2G
MOSFET P-CH 20V 2.4A MICRO8
