IRL2203STRR
MOSFET N-CH 30V 100A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL2203STRR is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The low on-resistance of 7mOhm at 60A and 10V gate-source voltage ensures efficient power delivery. With a maximum gate charge of 110 nC at 4.5V, it facilitates rapid switching. The MOSFET offers a power dissipation of 130W at 25°C (Tc) and 3.8W (Ta) in a surface-mount TO-263 (D2PAK) package, suitable for high-power density designs. Operating across a temperature range of -55°C to 175°C (TJ), it finds application in automotive, industrial power control, and high-current switching systems. The Vishay Siliconix IRL2203STRR is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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