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IRL2203STRR

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IRL2203STRR

MOSFET N-CH 30V 100A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRL2203STRR is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The low on-resistance of 7mOhm at 60A and 10V gate-source voltage ensures efficient power delivery. With a maximum gate charge of 110 nC at 4.5V, it facilitates rapid switching. The MOSFET offers a power dissipation of 130W at 25°C (Tc) and 3.8W (Ta) in a surface-mount TO-263 (D2PAK) package, suitable for high-power density designs. Operating across a temperature range of -55°C to 175°C (TJ), it finds application in automotive, industrial power control, and high-current switching systems. The Vishay Siliconix IRL2203STRR is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V

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