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IRL2203STRL

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IRL2203STRL

MOSFET N-CH 30V 100A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel, part number IRL2203STRL, is a high-performance power MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 100 A at 25°C (Tc). With a low on-resistance (Rds On) of 7 mOhm at 60 A and 10 V, it minimizes conduction losses. The device is packaged in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management with a maximum power dissipation of 130 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 110 nC at 4.5 V and input capacitance (Ciss) of 3500 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and power supply applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V

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