IRFZ48S
MOSFET N-CH 60V 50A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFZ48S is an N-Channel power MOSFET designed for high-density power containment. This component features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). The device exhibits a low on-resistance (Rds(on)) of 18mOhm maximum at 43A and 10V gate drive. Key electrical characteristics include a maximum gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 2400 pF maximum at 25V. The IRFZ48S is packaged in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 190W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET finds application in various power conversion and control systems across industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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