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IRFZ48S

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IRFZ48S

MOSFET N-CH 60V 50A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFZ48S is an N-Channel power MOSFET designed for high-density power containment. This component features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). The device exhibits a low on-resistance (Rds(on)) of 18mOhm maximum at 43A and 10V gate drive. Key electrical characteristics include a maximum gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 2400 pF maximum at 25V. The IRFZ48S is packaged in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 190W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET finds application in various power conversion and control systems across industrial, automotive, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 43A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 190W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V

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