IRFZ48R
MOSFET N-CH 60V 50A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel IRFZ48R. This through-hole component features a 60 V drain-source voltage and 50 A continuous drain current at 25°C. The IRFZ48R offers a maximum on-resistance of 18 mOhm at 43 A and 10 V. With a gate charge of 110 nC at 10 V and input capacitance of 2400 pF at 25 V, it is suitable for power switching applications. The device is rated for 190 W power dissipation and operates within a temperature range of -55°C to 175°C. The TO-220AB package is utilized for this component. Applications include industrial power supplies and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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