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IRFZ44S

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IRFZ44S

MOSFET N-CH 60V 50A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFZ44S is an N-Channel Power MOSFET designed for high-current switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). The Rds(On) is specified at a maximum of 28mOhm at 31A and 10V Vgs, with a gate charge (Qg) of 67 nC at 10V. Input capacitance (Ciss) is a maximum of 1900 pF at 25V. The device is packaged in a TO-263-3, D2PAK (Surface Mount) configuration and supports a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 150W (Tc) and 3.7W (Ta). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and power supply applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 31A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 25 V

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