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IRFZ34SPBF

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IRFZ34SPBF

MOSFET N-CH 60V 30A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRFZ34SPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). Its low on-resistance (Rds On) of 50mOhm at 18A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. The device offers a maximum gate charge (Qg) of 46 nC at 10V and an input capacitance (Ciss) of up to 1200 pF at 25V. With a maximum power dissipation of 88W at 25°C (Tc), the IRFZ34SPBF is suitable for demanding power management solutions. The MOSFET technology utilizes a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Operating within an extended temperature range of -55°C to 175°C (TJ), this Vishay Siliconix component is commonly employed in power supplies, motor control, and automotive electronics. The IRFZ34SPBF supports a gate drive voltage of up to 10V for optimal Rds On performance and has a ±20V maximum Vgs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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