IRFZ34SPBF
MOSFET N-CH 60V 30A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFZ34SPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). Its low on-resistance (Rds On) of 50mOhm at 18A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. The device offers a maximum gate charge (Qg) of 46 nC at 10V and an input capacitance (Ciss) of up to 1200 pF at 25V. With a maximum power dissipation of 88W at 25°C (Tc), the IRFZ34SPBF is suitable for demanding power management solutions.
The MOSFET technology utilizes a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Operating within an extended temperature range of -55°C to 175°C (TJ), this Vishay Siliconix component is commonly employed in power supplies, motor control, and automotive electronics. The IRFZ34SPBF supports a gate drive voltage of up to 10V for optimal Rds On performance and has a ±20V maximum Vgs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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