IRFZ34S
MOSFET N-CH 60V 30A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFZ34S is an N-channel power MOSFET designed for high-efficiency switching applications. This TO-263 (D2PAK) packaged device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 50mOhm at 18A and 10V, it minimizes conduction losses. The MOSFET exhibits a gate charge (Qg) of 46nC at 10V and an input capacitance (Ciss) of 1200pF at 25V, facilitating fast switching speeds. Power dissipation is rated at 88W (Tc) and 3.7W (Ta), with an operating temperature range of -55°C to 175°C. This component is commonly utilized in power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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