IRFZ34PBF-BE3
MOSFET N-CH 60V 30A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFZ34PBF-BE3. This through-hole component features a 60V drain-source voltage (Vdss) and a continuous drain current of 30A at 25°C (Tc). The power dissipation is rated at 88W (Tc). With a low on-resistance of 50mOhm at 18A and 10V (Rds On), it offers efficient switching. Key parameters include a gate charge of 46nC (Qg) at 10V and input capacitance of 1200pF (Ciss) at 25V. The operating temperature range is -55°C to 175°C (TJ). The TO-220AB package is supplied in tubes. This device is suitable for applications in industrial power control and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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