IRFZ34L
MOSFET N-CH 60V 30A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFZ34L is an N-Channel Power MOSFET designed for high-performance applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 50 mOhm at 18 A and 10 V gate-source voltage (Vgs). With a gate charge (Qg) of 46 nC at 10 V and input capacitance (Ciss) of 1200 pF at 25 V, this MOSFET offers efficient switching characteristics. Power dissipation is rated at 88 W (Tc) and 3.7 W (Ta). The device is packaged in a TO-262-3 configuration with long leads, suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
Request a Quote
Clients Also Buy
IRFIBC30G
MOSFET N-CH 600V 2.5A TO220-3
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SQD50P06-15L_T4GE3
P-CHANNEL 60-V (D-S) 175C MOSFET
