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IRFZ34

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IRFZ34

MOSFET N-CH 60V 30A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix presents the IRFZ34, an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 50mOhm maximum at 18A and 10V gate drive, it minimizes conduction losses. The device offers a maximum power dissipation of 88W (Tc) and a gate charge (Qg) of 46nC maximum at 10V. It is packaged in a TO-220AB through-hole configuration, suitable for efficient thermal management. Key parameters include an input capacitance (Ciss) of 1200pF maximum at 25V and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power switching, motor control, and power supply designs across various industrial and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)88W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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