IRFZ30
MOSFET N-CH 50V 30A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFZ30, a high-performance N-Channel Power MOSFET, offers a 50V drain-to-source voltage and a continuous drain current capability of 30A at 25°C (Tc). This through-hole component, packaged in a standard TO-220AB, features a low on-resistance of 50mOhm maximum at 16A and 10V gate-source voltage. Optimized for efficient switching, it exhibits a gate charge of 30 nC maximum at 10V and an input capacitance of 1600 pF maximum at 25V. With a maximum power dissipation of 74W (Tc) and an operating temperature range of -55°C to 150°C, the IRFZ30 is suitable for demanding applications in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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