IRFZ24
MOSFET N-CH 60V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFZ24 is an N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 17A at 25°C, this component offers excellent power handling with a maximum power dissipation of 60W at the case. The low on-resistance of 100mOhm at 10A and 10V gate drive, combined with a gate charge of 25 nC max at 10V, ensures efficient switching performance. Input capacitance (Ciss) is 640 pF max at 25V. This through-hole device utilizes a TO-220AB package, suitable for mounting in various industrial and automotive power management systems. It operates across a wide temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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