IRFZ20
MOSFET N-CH 50V 15A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFZ20 is an N-Channel Power MOSFET featuring a 50V drain-source breakdown voltage and a continuous drain current capability of 15A at 25°C (Tc). This through-hole component, housed in a TO-220AB package, offers a maximum power dissipation of 40W (Tc). The Rds(on) is rated at 100mOhm maximum at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 17nC maximum at 10V and an input capacitance (Ciss) of 850pF maximum at 25V. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in industrial and automotive sectors requiring efficient switching and power handling.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
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