IRFZ14S
MOSFET N-CH 60V 10A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFZ14S N-Channel Power MOSFET, designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C case temperature. The low Rds(on) of 200mOhm at 6A and 10V gate drive voltage ensures efficient power transfer. With a maximum gate charge of 11 nC and input capacitance of 300 pF, it offers robust switching performance. The TO-263 (D2PAK) surface mount package provides excellent thermal management, supporting power dissipation up to 43W at the case. Operating across a wide temperature range of -55°C to 175°C, the IRFZ14S is suitable for industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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