IRFZ10
MOSFET N-CH 60V 10A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFZ10. This through-hole component features a 60V drain-source voltage and a continuous drain current of 10A at 25°C (Tc). With a maximum power dissipation of 43W (Tc) and a low on-resistance of 200mOhm at 6A and 10V, the IRFZ10 is suitable for applications requiring efficient switching. Key parameters include a gate charge of 11nC at 10V and input capacitance of 300pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ) and is supplied in a TO-220AB package. This component finds utility in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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