IRFUC20
MOSFET N-CH 600V 2A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFUC20. This device features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C (Tc). The Rds On is a maximum of 4.4 Ohm at 1.2A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 18 nC at 10V and input capacitance (Ciss) of 350 pF at 25V. Power dissipation is rated at 42W (Tc) and 2.5W (Ta). The device is housed in a TO-251AA package for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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