IRFU9310
MOSFET P-CH 400V 1.8A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel Power MOSFET, part number IRFU9310. This device offers a 400V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.8A at 25°C (Tc). With a maximum power dissipation of 50W (Tc), it features a high gate threshold voltage of 4V at 250µA. The Rds On is specified at a maximum of 7 Ohm at 1.1A and 10V gate drive. Key capacitances include Ciss of 270pF and Qg of 13nC, both measured under specified conditions. The TO-251AA package with short leads is designed for through-hole mounting. This MOSFET is suitable for applications in industrial and high-voltage power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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