IRFU9220
MOSFET P-CH 200V 3.6A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU9220 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 3.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.5 Ohm at 2.2A and 10V gate-source voltage, it ensures low conduction losses. The device features a low gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 340 pF at 25V, facilitating fast switching speeds. The IRFU9220 is packaged in a TO-251AA (IPAK) through-hole configuration, suitable for power management in industrial, automotive, and telecommunications equipment. Power dissipation capabilities are rated at 2.5W (Ta) and 42W (Tc). The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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