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IRFU9214

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IRFU9214

MOSFET P-CH 250V 2.7A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number IRFU9214. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 2.7A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The ON-resistance (Rds On) is a maximum of 3 Ohms at 1.7A and 10V Vgs. Gate charge (Qg) is specified at 14 nC maximum at 10V Vgs, and input capacitance (Ciss) is 220 pF maximum at 25V Vds. The IRFU9214 utilizes MOSFET technology and is housed in a TO-251AA (IPAK) package for through-hole mounting. Designed for operation across a wide temperature range of -55°C to 150°C (TJ), this component is suitable for applications in industrial and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Rds On (Max) @ Id, Vgs3Ohm @ 1.7A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 25 V

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