IRFU9214
MOSFET P-CH 250V 2.7A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number IRFU9214. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 2.7A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The ON-resistance (Rds On) is a maximum of 3 Ohms at 1.7A and 10V Vgs. Gate charge (Qg) is specified at 14 nC maximum at 10V Vgs, and input capacitance (Ciss) is 220 pF maximum at 25V Vds. The IRFU9214 utilizes MOSFET technology and is housed in a TO-251AA (IPAK) package for through-hole mounting. Designed for operation across a wide temperature range of -55°C to 150°C (TJ), this component is suitable for applications in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
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