IRFU9210
MOSFET P-CH 200V 1.9A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU9210 is a P-Channel MOSFET designed for high-voltage switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) of 1.9 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 3 Ohm maximum at 1.1 A and 10 V gate-source voltage. With a maximum gate charge (Qg) of 8.9 nC at 10 V and input capacitance (Ciss) of 170 pF at 25 V, it is suitable for efficient power management. The IRFU9210 is packaged in a TO-251AA (IPAK) through-hole package, rated for a maximum junction temperature of 150°C. Power dissipation capabilities include 2.5 W (Ta) and 25 W (Tc). Industries utilizing this component include industrial automation and power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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