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IRFU9120

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IRFU9120

MOSFET P-CH 100V 5.6A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFU9120 is a P-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vds) of 100V and a continuous Drain Current (Id) of 5.6A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 600mOhm maximum at 3.4A and 10V Vgs. With a maximum power dissipation of 42W at 25°C (Tc), it is suitable for demanding thermal environments. The TO-251AA package facilitates through-hole mounting. Key parameters include a Gate Charge (Qg) of 18 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 390 pF maximum at 25V Vds. Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Rds On (Max) @ Id, Vgs600mOhm @ 3.4A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 25 V

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