IRFU9120
MOSFET P-CH 100V 5.6A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU9120 is a P-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vds) of 100V and a continuous Drain Current (Id) of 5.6A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 600mOhm maximum at 3.4A and 10V Vgs. With a maximum power dissipation of 42W at 25°C (Tc), it is suitable for demanding thermal environments. The TO-251AA package facilitates through-hole mounting. Key parameters include a Gate Charge (Qg) of 18 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 390 pF maximum at 25V Vds. Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
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