IRFU9020
MOSFET P-CH 50V 9.9A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU9020 is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 9.9A at 25°C (Tc), with a maximum power dissipation of 42W (Tc). The On-Resistance (Rds On) is specified at a maximum of 280mOhm when conducting 5.7A with a gate-source voltage of 10V. Key parameters include a typical Gate Charge (Qg) of 14 nC at 10V and Input Capacitance (Ciss) of 490 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in a TO-251AA (IPAK) through-hole configuration, the IRFU9020 is commonly utilized in the automotive and industrial sectors for power management and control circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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