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IRFU9020

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IRFU9020

MOSFET P-CH 50V 9.9A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFU9020 is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 9.9A at 25°C (Tc), with a maximum power dissipation of 42W (Tc). The On-Resistance (Rds On) is specified at a maximum of 280mOhm when conducting 5.7A with a gate-source voltage of 10V. Key parameters include a typical Gate Charge (Qg) of 14 nC at 10V and Input Capacitance (Ciss) of 490 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in a TO-251AA (IPAK) through-hole configuration, the IRFU9020 is commonly utilized in the automotive and industrial sectors for power management and control circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.9A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 5.7A, 10V
FET Feature-
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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