IRFU9014
MOSFET P-CH 60V 5.1A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel IRFU9014. This device features a 60 V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (Id) of 5.1 A at 25°C (Tc). It offers a low on-resistance of 500 mOhms at 3.1 A and 10 V (Vgs), with a maximum gate-source voltage of ±20 V. Key parameters include a gate charge (Qg) of 12 nC at 10 V and input capacitance (Ciss) of 270 pF at 25 V. The MOSFET is housed in a TO-251AA package for through-hole mounting and supports a maximum power dissipation of 2.5 W (Ta) or 25 W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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