IRFU420
MOSFET N-CH 500V 2.4A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU420 is an N-Channel power MOSFET designed for demanding applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 2.4A at 25°C (Tc). The IRFU420 offers a low on-resistance (Rds On) of 3 Ohm maximum at 1.4A and 10V Vgs. With a maximum gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 360 pF at 25V, this MOSFET is suitable for switching applications requiring efficient power control. Its TO-251AA (IPAK) through-hole package allows for robust mounting and thermal management, with power dissipation ratings of 2.5W (Ta) and 42W (Tc). The operating temperature range is -55°C to 150°C (TJ). This device finds utility in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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