IRFU310
MOSFET N-CH 400V 1.7A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFU310. This TO-251AA packaged device features a Drain-to-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 1.7A at 25°C (Tc). The On-Resistance (Rds On) is a maximum of 3.6 Ohms at 1A, 10V. Key parameters include a Gate Charge (Qg) of 12 nC maximum at 10V, and an Input Capacitance (Ciss) of 170 pF maximum at 25V. The device offers a maximum power dissipation of 2.5W (Ta) and 25W (Tc) and operates across a temperature range of -55°C to 150°C. Applications include power supplies and motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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