IRFU224PBF
MOSFET N-CH 250V 3.8A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number IRFU224PBF. This through-hole component features a 250V drain-source breakdown voltage and a continuous drain current rating of 3.8A at 25°C (Tc). With a maximum on-resistance of 1.1 Ohm at 2.3A and 10V Vgs, it offers efficient switching. The device boasts a gate charge (Qg) of 14 nC (max) and input capacitance (Ciss) of 260 pF (max) at 25V Vds. Power dissipation is rated at 42W (Tc) and 2.5W (Ta). Operating temperature range is -55°C to 150°C (TJ). The TO-251AA package is suitable for applications in industrial automation, power supplies, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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