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IRFU224PBF

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IRFU224PBF

MOSFET N-CH 250V 3.8A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel Power MOSFET, part number IRFU224PBF. This through-hole component features a 250V drain-source breakdown voltage and a continuous drain current rating of 3.8A at 25°C (Tc). With a maximum on-resistance of 1.1 Ohm at 2.3A and 10V Vgs, it offers efficient switching. The device boasts a gate charge (Qg) of 14 nC (max) and input capacitance (Ciss) of 260 pF (max) at 25V Vds. Power dissipation is rated at 42W (Tc) and 2.5W (Ta). Operating temperature range is -55°C to 150°C (TJ). The TO-251AA package is suitable for applications in industrial automation, power supplies, and motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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