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IRFU224

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IRFU224

MOSFET N-CH 250V 3.8A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFU224 is an N-Channel Power MOSFET designed for demanding applications requiring high voltage and efficient switching. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 3.8A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1.1 Ohm at 2.3A and 10V gate-source voltage. With a gate charge (Qg) of 14 nC and input capacitance (Ciss) of 260 pF, it offers favorable switching characteristics. The IRFU224 is packaged in a TO-251AA (IPAK) through-hole configuration, facilitating robust board mounting. Power dissipation is rated at 2.5W (Ta) and 42W (Tc). This component is commonly employed in industrial power supplies and motor control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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