IRFU224
MOSFET N-CH 250V 3.8A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU224 is an N-Channel Power MOSFET designed for demanding applications requiring high voltage and efficient switching. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 3.8A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1.1 Ohm at 2.3A and 10V gate-source voltage. With a gate charge (Qg) of 14 nC and input capacitance (Ciss) of 260 pF, it offers favorable switching characteristics. The IRFU224 is packaged in a TO-251AA (IPAK) through-hole configuration, facilitating robust board mounting. Power dissipation is rated at 2.5W (Ta) and 42W (Tc). This component is commonly employed in industrial power supplies and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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