IRFU214
MOSFET N-CH 250V 2.2A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFU214 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source breakdown voltage (Vdss) of 250V and a continuous drain current (Id) capability of 2.2A at 25°C (Tc). With a low on-resistance (Rds On) of 2Ohm maximum at 1.3A and 10V gate-source voltage, it minimizes conduction losses. The device offers a maximum power dissipation of 25W (Tc) and is housed in a TO-251AA package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 8.2 nC and input capacitance (Ciss) of 140 pF at 25V. This MOSFET is utilized in various industrial sectors requiring robust power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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