IRFU1N60A
MOSFET N-CH 600V 1.4A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU1N60A is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source breakdown voltage (Vdss) of 600V and a continuous drain current (Id) of 1.4A at 25°C. With a maximum power dissipation of 36W (Tc), it is suitable for demanding power conversion and control circuits. The device exhibits a typical Rds(On) of 7 Ohms at 840mA and 10V gate drive. Key parameters include input capacitance (Ciss) of 229pF at 25V and gate charge (Qg) of 14nC at 10V. The Vishay Siliconix IRFU1N60A is packaged in a TO-251AA (IPAK) through-hole configuration for ease of assembly. This MOSFET is utilized across various industries including industrial power supplies, lighting, and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 840mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 229 pF @ 25 V |
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