IRFU120
MOSFET N-CH 100V 7.7A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU120 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 7.7A at 25°C case temperature. The TO-251AA package offers a through-hole mounting solution with a low thermal resistance, enabling power dissipation of up to 42W at 25°C case temperature. Key electrical characteristics include a maximum on-resistance (Rds On) of 270mOhm at 4.6A and 10V gate-source voltage, and a gate charge (Qg) of 16nC at 10V. The device operates across a wide temperature range of -55°C to 150°C. Applications for this MOSFET include power supplies, motor control, and general-purpose power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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