IRFU024
MOSFET N-CH 60V 14A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET, N-Channel, part number IRFU024. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C (Tc). The IRFU024 offers a low on-resistance of 100mOhm maximum at 8.4A and 10V Vgs. With a gate charge (Qg) of 25 nC maximum at 10V and input capacitance (Ciss) of 640 pF maximum at 25V, it is suitable for various power switching applications. The device is housed in a TO-251AA package for through-hole mounting and supports a maximum junction temperature of 150°C. Power dissipation is rated at 42W (Tc). This component is utilized in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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