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IRFU020PBF

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IRFU020PBF

MOSFET N-CH 60V 14A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFU020PBF is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 60V drain-source voltage rating and supports a continuous drain current of 14A at 25°C (Tc). With a low on-resistance of 100mOhms maximum at 8.4A and 10V, it minimizes conduction losses. The MOSFET is housed in a TO-251AA (IPAK) package, suitable for through-hole mounting. Key electrical parameters include a gate charge of 25nC maximum at 10V and an input capacitance of 640pF maximum at 25V. The device operates within an ambient temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 2.5W (Ta) and 42W (Tc). This Vishay Siliconix MOSFET is commonly utilized in industrial and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 8.4A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds640 pF @ 25 V

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